首页> 外国专利> FINE CAVITY STRUCTURE CONTAINING POROUS SILICON AS LIGHT SOURCE FOR CAF2:ND LASER AND ARRANGING METHOD FOR THE SAME LIGHT SOURCE

FINE CAVITY STRUCTURE CONTAINING POROUS SILICON AS LIGHT SOURCE FOR CAF2:ND LASER AND ARRANGING METHOD FOR THE SAME LIGHT SOURCE

机译:CAF2:ND激光器中含多孔硅作为光源的微腔结构及相同光源的排列方法

摘要

PURPOSE: To provide method and device for a generating laser light from a thin film, doped with a rare earth by using porous Si as a light source for optical pumping. ;CONSTITUTION: A method and device 242 cause intense spectral emission by relating a porous Si layer 230 to a CaF2 film 234 which is doped with a rare earth, so that the CaF2 film 234 doped with the rare earth absorbs light from the porous Si layer 230. Circuits 228 and 244 related to the device 242 cause light emission by activating the porous Si layer 230. The porous Si layer 230 is formed electrically by a chemical vapor-depositing method or by forming crystalline silicon into an anode.;COPYRIGHT: (C)1994,JPO
机译:目的:提供一种方法和装置,用于通过使用多孔硅作为光泵浦的光源从掺有稀土的薄膜中产生激光。 ;构成:方法和装置242通过使多孔硅层230与掺杂有稀土的CaF 2 膜234相关,从而引起强烈的光谱发射,使得CaF 2

著录项

  • 公开/公告号JPH06224471A

    专利类型

  • 公开/公告日1994-08-12

    原文格式PDF

  • 申请/专利权人 TEXAS INSTR INC TI;

    申请/专利号JP19930243282

  • 发明设计人 DUNCAN WALTER M;CHO CHIH-CHEN;

    申请日1993-09-29

  • 分类号H01L33/00;H01L27/15;

  • 国家 JP

  • 入库时间 2022-08-22 04:53:33

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