METHOD OF SELECTIVELY REMOVING RESIDUES OF ORGANIC METAL COMPOUND AND ORGANIC SILICON COMPOUND AND DAMAGED OXIDE

摘要

PURPOSE: To provide a method of selectively removing residues of an oxidized org. metal compd. produced by the plasma etching of a metal and metal alloy from a semiconductor substrate treated by contacting the substrate to specified etching soln. ;CONSTITUTION: Residues of an organic metal compd. and org. Si compd., natural oxide and damaged oxide are selectively removed from a semiconductor substrate by contacting the substrate to an etching soln. for a time enough to remove the residues, etc., from the substrate. The etching soln. is an anhydrous ammonium fluoride selected among anhydrous ammonium fluorides and anhydrous H ammonium fluorides and their mixtures and contains water about 4 wt.% or less, without HF.;COPYRIGHT: (C)1994,JPO