EXTRACTING METHOD FOR MODEL PARAMETER FOR CIRCUIT SIMULATION OF MOS TYPE TRANSISTOR

摘要

PURPOSE: To easily obtain each proper parameter by summing an actual drain resistance and a source resistance from a specified parasitic resistance. ;CONSTITUTION: ON resistance (Ron)-channel length (L) characteristic is obtained from drain source current (Ids)-drain source voltage (vds), summing resistance (RD + RS) and the initial value of the width (2LD) of inter-channel-drain depletion layer. Then, parasitic resistance (Rp)-drain source voltage (Vds) characteristic is obtaine by an expression from ON resistance (Ron)-channel length (L) at the time of setting an electrode between an internal drain and source to be V'ds, a channel width to be W, the capacitance of a gate oxide film to be Cox. threshold value voltage to be Vth, gate source volume to be Vgs, a channel resistance to be Rch = V'ds/Ids and the channel length (L) to be an independent variable. Then, the sum (RD + RS) of the actual drain resistance (RD) and the source resistance (RS) is obtained from Rp of the intersection of a line obtaine by prolonging the linear area of the characteristic and the line of Vds =0.;COPYRIGHT: (C)1994,JPO&Japio