首页> 外国专利> DEEP UV-SENSITIVE PHOTORESIST COMPOSITION RESISTANT TO LATENT-IMAGE DECAY

DEEP UV-SENSITIVE PHOTORESIST COMPOSITION RESISTANT TO LATENT-IMAGE DECAY

机译:耐深紫外光敏光刻胶成分,可防止潜像衰变

摘要

PURPOSE: To ensure improved critical dimensional stability in a prolonged holding time between the irradiation of a resist compsn. and the baking of it after the irradiation by incorporating a specified polymer, a photo-acid generating body and carbonate esters. CONSTITUTION: This compsn. is a positive photoresist compsn. contg. an acid- stable polymer insoluble in water but usually soluble in an aq. alkali medium, a mixture of carbonate esters of polyhydric phenol and tert. butyl alcohol as acid-unstable compds. inhibiting the dissolution of the polymer and a photo-acid generating body represented by the formula, wherein Q is diazonaphthoquinone, R is H or -CH2 OS (=O) -Q, R' is I-I, hydroxy or -O-S(=O)2 -Q, R2 is H or lower alkyl, X is H or nitro, and when X is nitro, R2 is lower alkyl.
机译:目的:确保在抗蚀剂复合物辐照之间的延长保持时间内,改善临界尺寸稳定性。通过加入特定的聚合物,光产酸体和碳酸酯进行辐射后的烘烤。组成:这个组成部分。是正性光刻胶组合物。续一种不溶于水但通常可溶于水溶液的酸稳定聚合物。碱介质,多元酚和叔碳酸酯的碳酸酯的混合物。丁醇作为酸不稳定化合物。抑制聚合物和下式表示的光酸产生体的溶解,其中Q为重氮萘醌,R为H或-CH 2 OS(= O)-Q,R'为II,羟基或-OS(= O)在2-Q中,R 2为H或低级烷基,X为H或硝基,并且当X为硝基时,R 2为低级烷基。

著录项

  • 公开/公告号JPH06301201A

    专利类型

  • 公开/公告日1994-10-28

    原文格式PDF

  • 申请/专利权人 MORTON THIOKOL INC;

    申请/专利号JP19940034687

  • 申请日1994-03-04

  • 分类号G03F7/004;G03F7/039;H01L21/027;

  • 国家 JP

  • 入库时间 2022-08-22 04:52:27

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