首页> 外国专利> PRETREATING APPARATUS FOR SILICON WAFER BEFORE INSPECTION

PRETREATING APPARATUS FOR SILICON WAFER BEFORE INSPECTION

机译:检查前准备硅晶片的装置

摘要

PURPOSE: To dissociate accurate impurity pair in a silicon wafer and to stably measure an impurity element concentration by installing the wafer in a heat insulator for a predetermined time, then moving it to a cooler, and controlling its moving means. ;CONSTITUTION: An apparatus dissociates elements between lattices as a pretreatment before an element temperature of a silicon wafer 5 is measured. The apparatus comprises a heat insulator capable of controlling a temperature from the ambient temperature to a temperature to a predetermined range such as a hot chuck 2, a cooler for cooling the wafer 5 such as an aluminum block 7. The apparatus also comprises moving means (robot) 9 for moving the wafer 5 to the block 7 after the wafer 5 is placed on the chuck 2 for a predetermined time, and control means 13 for controlling the robot 9. The robot 9, the controller 6, etc., are automatically controlled by the means 13 to maintain a moving time of the wafer 5 constant.;COPYRIGHT: (C)1994,JPO&Japio
机译:目的:通过将硅片安装在隔热箱中预定的时间,然后将其移动到冷却器中并控制其移动装置,以分离出硅晶片中的准确杂质对并稳定地测量杂质元素的浓度。 ;组成:一种装置,在测量硅晶片5的元件温度之前,将晶格之间的元素分解作为预处理。该设备包括一个能够将环境温度控制在预定范围内的温度的绝热材料,例如一个热卡盘2;一个用于冷却晶片5的冷却器,例如一个铝块7。该设备还包括移动装置(在将晶片5放置在卡盘2上预定时间后将晶片5移动到块7上的机器人9,以及用于控制机器人9的控制装置13。机器人9,控制器6等是自动的。由装置13控制以保持晶片5的移动时间恒定。;版权:(C)1994,JPO&Japio

著录项

  • 公开/公告号JPH06275691A

    专利类型

  • 公开/公告日1994-09-30

    原文格式PDF

  • 申请/专利权人 SUMITOMO SITIX CORP;

    申请/专利号JP19930063597

  • 发明设计人 MIYAZAKI MORIMASA;

    申请日1993-03-23

  • 分类号H01L21/66;

  • 国家 JP

  • 入库时间 2022-08-22 04:51:15

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号