MANUFACTURE OF N-CHANNEL AND P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR AND CMOS TRANSISTOR BY USING CMOS OR BIPOLAR/CMOS MANUFACTURE

摘要

PURPOSE: To provide a junction-type field effect transistor(FET) with a stable threshold voltage by adding the alteration of a mask, two masks, and an etching process to CMOS manufacturing method. CONSTITUTION: A mask of a 4th process demarcates an active region 51 of a JFET 5, according to processes of MOS transistors(TR) 1 and 3, a mask of a 7th process demarcates a source 35 and a drain 37 in it, and N-type impurities are implanted in the source 31 and drain 33 of the N-channel MOS TR 3 at the same time. In an additional process, a gate oxidized film is removed from an active region 15 of the JFET 5, impurities are implanted in an exposed region demarcated by a field oxidized film 21 to form a channel region 19 of the JFET 5, and a mask of an 8th process demarcates a substrate contact 45 surrounding the gate 43 and drain 37. Therefore, a mask of a final process is provided with a metal contact at the electrode of the JFET 5, which is made to cope with a passivation film, so that a JFET with a stable threshold voltage can be obtained.