首页> 外国专利> Method of making n-channel and p-channel junction field-effect transistors and CMOS transistors using a CMOS or bipolar/CMOS process

Method of making n-channel and p-channel junction field-effect transistors and CMOS transistors using a CMOS or bipolar/CMOS process

机译:使用CMOS或双极/ CMOS工艺制造n沟道和p沟道结型场效应晶体管和CMOS晶体管的方法

摘要

A method of making N-channel and P-channel junction field- effect transistors using a modified CMOS process that simultaneously makes complementary metal-oxide-semiconductor transistors, or a modified BiCMOS process that simultaneously makes bipolar transistors and complementary metal-oxide-semiconductor transistors. Making junction field effect transistors using the basic CMOS process requires mask changes and an additional mask, etch, and implant step. Making junction field effect transistors using the BiCMOS process only requires mask changes.
机译:一种使用同时制造互补金属氧化物半导体晶体管的改良CMOS工艺或同时制造双极晶体管和互补金属氧化物半导体晶体管的改良BiCMOS工艺制造N沟道和P沟道结型场效应晶体管的方法。使用基本的CMOS工艺制造结型场效应晶体管需要更改掩模,并需要额外的掩模,蚀刻和注入步骤。使用BiCMOS工艺制造结型场效应晶体管只需要更改掩模即可。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号