ION SOURCE BEAM DRAWING-OUT METHOD AND DEVICE THEREOF

摘要

PURPOSE: To optimize the drawing-out of a beam of an ion source to generate a metal ion by means of vacuum arc discharge. ;CONSTITUTION: Arc discharge is generated between an anode 2 and a cathode 3 arranged/insulated mutually in a vacuum envelope body 1 by taking advantage of discharge generated in a trigger electrode 6, and metal plasma formed by evaporating/ionizing a part of the cathode is introduced to a plasma chamber from a discharge area, and an ion beam is drawn out from a grid opening part 15. Ion implantation is carried out while controlling so that an arc electric current showing the maximum extractor electric current can be found below a threshold value K by which a ratio of an electric current of an extractor grid 12 to an electric current of a suppressor grid 13 is determined with every element by means of an integrating circuit 19 and an operation circuit 20. Thereby, since the stable ion implantation becomes possible, implantation efficiency is increased, and a processing time can be shortened besides a fine adjustment on dispersion of implantation conditions caused by operators or the arc electric current during the implantation becomes unnecessary.;COPYRIGHT: (C)1993,JPO&Japio