METHOD FOR MEASURING STRESS OF THIN FILM, AND METHOD AND DEVICE FOR MANUFACTURING TEST PIECE FOR STRESS MEASUREMENT

摘要

PURPOSE: To precisely measure the stress of a thin film having a thin film thickness by bringing an O-ring into contact with the surface or reverse side of a base, conducting etching to manufacture a test piece, anisotropically etching the base reverse side after forming a thin film, and then measuring warp. ;CONSTITUTION: A silicon base 4 to which a thin film 5 is adhered is enclosed by vessels 1, 2, and the reverse side of the base 4 is exposed to the surface to make contact with an etching solution 7. An O-ring 3 is arranged on the reverse side of the base 4 to prevent the etching solution 7 from making contact with the thin film 5 adhered to the surface of the base 4. The vessels 1, 2 are dipped in an outer vessel 6 filled with the etching solution 7, and the etching solution 7 is heated by a heater 10 to increase etching speed. The thin film can be thinned to have an uniform thickness by use of a solution of potassium hydroxide which is an etching solution highly anisotropic to the etching solution 7. Further, sealing is conducted by use of the ring 3, whereby the natural characteristic of the thin film 5 can be measured without corroding the thin film 5, and the stress of the extremely thin film 5 can be precisely measured.;COPYRIGHT: (C)1994,JPO&Japio