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MEMORY CELL AND MEMORY DEVICE BY MEANS OF MEMORY CELL

机译:通过记忆细胞的方式的记忆细胞和记忆装置

摘要

PURPOSE: To provide a memory cell wherein data of at least a plurality of bits can be stored and to provide a memory device wherein a memory capacity can be increased by using the memory cell. ;CONSTITUTION: Every memory cell 8 is composed of every MOSFET 22, MOSFETs provided with four kinds of different ON resistance values are prepared, and MOSFETs provided with prescribed ON resistor values are formed in individual memory cells. Sources for the MOSFETs 22 arranged in the row direction of a memory cell array are connected to the same grounding potential line 6 and drains are connected to the same bit line 4. Gates for the MOSFETs 22 arranged in the column direction are connected to the same word line 2. A potential generated between the sources and the drains for the MOSFETs is converted into two-bit data by a data conversion device 10.;COPYRIGHT: (C)1994,JPO&Japio
机译:用途:提供一种其中可以存储至少多个位的数据的存储单元,并且提供一种其中可以通过使用该存储单元来增加存储容量的存储装置。组成:每个存储单元8由每个MOSFET 22组成,准备具有四种不同导通电阻值的MOSFET,并在各个存储单元中形成具有规定的导通电阻值的MOSFET。沿存储单元阵列的行方向布置的MOSFET 22的源极连接至相同的接地电位线6,并且将漏极连接至相同的位线4。沿列方向布置的MOSFET 22的栅极连接至相同的接地电位线6。字线2。通过数据转换装置10将在MOSFET的源极和漏极之间产生的电势转换为两位数据。版权所有:(C)1994,JPO&Japio

著录项

  • 公开/公告号JPH0661456A

    专利类型

  • 公开/公告日1994-03-04

    原文格式PDF

  • 申请/专利权人 NIPPON STEEL CORP;

    申请/专利号JP19920227940

  • 发明设计人 SHIMIZU SHIN;

    申请日1992-08-04

  • 分类号H01L27/112;G11C16/04;

  • 国家 JP

  • 入库时间 2022-08-22 04:47:19

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