MODULATED-STRUCTURE OF PZT/PT FERROELECTRIC THIN FILMS FOR NON-VOLATILE RANDOM ACCESS MEMORIES

摘要

2131901 9405455 PCTABS00030 Modulated-structure polycrystalline or heteroepitaxial multilayers of PZT/PT ferroelectric thin films are deposited on a substrate, preferably by laser ablation. The laser ablation of the PZT/PT layers onto a prepared substrate occurs while maintaining the substrate at a temperature between 380 ·C to about 650 ·C. The target source for the PZT/PT laser ablated film may be either bulk PZT and PT ceramics or powders or individual metal oxides or metal pellets. The ferroelectric thin film device may be used for a random access memory.