首页>
外国专利>
MODULATED-STRUCTURE OF PZT/PT FERROELECTRIC THIN FILMS FOR NON-VOLATILE RANDOM ACCESS MEMORIES
MODULATED-STRUCTURE OF PZT/PT FERROELECTRIC THIN FILMS FOR NON-VOLATILE RANDOM ACCESS MEMORIES
展开▼
机译:非易失性随机存取存储器的PZT / PT铁电薄膜的调制结构
展开▼
页面导航
摘要
著录项
相似文献
摘要
Modulated-structure polycrystalline or heteroepitaxial multilayers of PZT/PT ferroelectric thin films are deposited on a substrate, preferably by laser ablation. The laser ablation of the PZT/PT layers onto a prepared substrate occurs while maintaining the substrate at a temperature between 380 °C to about 650 °C. The target source for the PZT/PT laser ablated film may be either bulk PZT and PT ceramics or powders or individual metal oxides or metal pellets. The ferroelectric thin film device may be used for a random access memory.
展开▼