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Ion implantation into In-based group III-V compound semiconductors
Ion implantation into In-based group III-V compound semiconductors
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机译:离子注入In基III-V族化合物半导体
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摘要
Implantation of a Group V ion species 14 (e.g., phosphorus or arsenic) into an In-based Group III-V compound semiconductor 10 (e.g., InP, InGaAs) followed by implantation of Be ions 14 produces a shallow p-type surface layer 16 and avoids significant in-diffusion of the dopant species. High carrier concentrations and activation efficiences are attained. The technique has application in the fabrication of FETs, APDs and ohmic contacts.
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