Ion implantation in In-based III-V compound semiconductors.

摘要

Implantation of a Group V ion species 14 (e.g., phosphorus or arsenic) into an In-based Group III-V compound semiconductor 10 (e.g., InP, InGaAs) followed by implantation of Be ions 14 produces a shallow p-type surface layer 16 and avoids significant in-diffusion of the dopant species. High carrier concentrations and activation efficiences are attained. The technique has application in the fabrication of FETs, APDs and ohmic contacts.