Device with an integrated colour selective photodiode and an amplifier connected to the photodiode

摘要

The amplifier contains at least one vertical bipolar transistor and is arranged in an identical integrated circuit as the photodiode. An emitter layer (17) of the vertical bipolar transistor is of the second type of conductivity (N). It has similar doping and layer thickness (c2) to a second semiconductor layer of the photodiode and is arranged on the surface in a base layer (18) of the vertical bipolar transistor. The latter is of the first type of conductivity (P). It has similar doping and layer thickness (d2) to a third semiconductor layer of the photodiode and is arranged on the surface in a part of an epitaxial layer (10) which is allocated to the vertical bipolar transistor and which forms a collector layer of the vertical bipolar transistor. The values of doping N+ and of an active layer thickness W1 of the second semiconductor layer of the photodiode and the values of doping P and of an active layer thickness W2 of the base layer (18) of the vertical bipolar transistor are selected in such a manner that the inequality IMAGE is satisfied. IMAGE