首页> 外国专利> MICROWAVE ENERGIZED DEPOSITION PROCESS USING A PRESSURE LOWER THAN THE MINIMUM POINT PRESSURE OF THE PASCHEN CURVE

MICROWAVE ENERGIZED DEPOSITION PROCESS USING A PRESSURE LOWER THAN THE MINIMUM POINT PRESSURE OF THE PASCHEN CURVE

机译:使用比帕森曲线的最低点压力低的压力进行微波激励沉积过程

摘要

The glow discharge deposition of thin layers of materials is much more effective when carried out at a pressure (C) which is lower than the pressure of the minimum point on the Paschen curve of the disposal system (A) and a power (C) greater than the minimum power required to maintain the deposition plasma to the pressure required for said process.
机译:在压力(C)下进行的材料薄层的辉光放电沉积要有效得多,压力(C)低于处理系统Paschen曲线上最小点的压力(A)且功率(C)较大比将沉积等离子体维持在所述工艺所需压力所需的最小功率大。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号