Control of Solid-Liquid Interface during Growth of GaAs Single Crystal by Horizontal Bridging Mill Method

摘要

The present invention relates to a control method of a solid-liquid interface during the growth of gallium arsenide (GaAs) single crystal by the Horizontal Bridge-Only (HB) method, and more particularly to a method of controlling a solid-So that a single crystal of dignity can be obtained. In order to maintain the smoothness of the solid-liquid interface, a refractory insulator 5 made of alumina magnesia is installed between the SiC liner tube 1 and the quartz reaction tube 2 by the length of gallium arsenide (GaAs) So that the temperature distribution in the cross section can be made uniform. Thus, the solid-liquid interface can be kept smooth and a single crystal of good quality can be obtained.