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METHOD FOR FLAW DETECTION IN SEMICONDUCTOR INSTRUMENTS AND LARGE SCALE CIRCUITS BASED ON STRUCTURE METAL-DIELECTRIC-SEMICONDUCTOR
METHOD FOR FLAW DETECTION IN SEMICONDUCTOR INSTRUMENTS AND LARGE SCALE CIRCUITS BASED ON STRUCTURE METAL-DIELECTRIC-SEMICONDUCTOR
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机译:基于结构金属-介电半导体的半导体仪器和大型电路中的缺陷检测方法
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摘要
FIELD: microelectronics. SUBSTANCE: method involves illumination of tested instruments by pulse laser beam, measuring electric parameters of tested instruments, comparison of measured parameters to reference ones. Wave length λ is in the following range: 1,24/Edλ1,24 Es and radiant emittance l is less than Qm=Id/Tm(1-R)κ·Tmax and pulse duration is less than Qm=1/α2 k, where Ed and Es are width prohibited zone of dielectric and semiconductor correspondingly, Id is threshold radiant emittance J/m2, R is metal layer albedo, κ is ratio of radiation absorption in layers of metal and dielectric, Tm and Tmax are corresponding temperatures for semiconductor melting point and for non-reversible changes in structure metal-dielectric-semiconductor caused by laser beam, k and α are values of temperature conductivity and absorption correspondingly. EFFECT: increased functional capabilities.
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机译:领域:微电子学。实质:该方法包括用脉冲激光束照射被测仪器,测量被测仪器的电参数,将测得的参数与参考参数进行比较。波长λ在以下范围内:1,24 / E d Sub> <λ<1,24 E s Sub>,辐射发射率l小于Q m < / Sub> = I d Sub> / T m Sub>(1-R)κ·T max Sub>,脉冲持续时间小于Q m Sub> = 1 /α 2 Sup> k,其中E d Sub>和E s Sub>分别是电介质和半导体的禁带区,I < Sub> d Sub>是阈值辐射发射J / m 2 Sup>,R是金属层反照率,κ是金属和电介质层中的辐射吸收比,T m Sub >和T max Sub>分别是半导体熔点的温度和由于激光束引起的结构金属-介电半导体的不可逆变化的温度,k和α分别是温度电导率和吸收率的值。效果:功能增强。
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