Thin etching silicon substrate - to mfr. IMPATT, beam-lead Schottky battery and PIN diodes

摘要

Thin etching a Si substrate comprises (a) using a SIMOX substrate, in which a Si02 layer is produced by 02 implantation and sealing; (b) selecting the depth of implantation so that the single crystalline Si above the Si02 layer is used for constructing semiconductor constructional elements and/or starting layer for semiconductor layers epitaxially grown on it, and (c) etching the Si substrate under the Si02 layer and stopping at the Si02 layer. USE - To mfr. IMPATT diodes, beam-lead Schottky battery diodes and beam-lead PIN diodes.