Semiconductor poison determination in quartz glass - by detecting electrical changes in semiconductor after treatment in presence of quartz glass

摘要

Determination of semiconductor poisons in quartz glass is carried out by (i) producing a releasable combination including a contact face between a quartz glass body (2,3,4,5) and a semiconductor layer (1); (ii) subjecting the combination to a thermal treatment; and (iii) examining the semiconductor layer in the contact face region for changes in its electrical properties. In an alternative process, a test body, contg. the quartz glass, is spaced from a substrate body, both bodies are subjected to a thermal treatment in which a surface layer is grown on the substrate body, the surface layer is at least partially dissolved and the semiconductor poison content in the soln. is determined. USE/ADVANTAGE - Esp. for determination of heavy metals (esp. Fe) and alkali metal ions which can damage SiC2 insulation layers and which can transfer from quartz glass equipment used in semiconductor mfg. processes. The process allows simple and rapid determination of semiconductor poisons in quartz glass and of their effects in semiconductor mfr.