Procedure for recording or depicting time-dependent potentials in microelectronics components.

摘要

To avoid measurement errors when recording time-dependent electrical signals in microelectronic components, it is necessary reliably to position the electron probe scanning the potential on the conductor track of interest over the entire period of measurement. This results in very stringent requirements for the quality and stability of the electron beam measuring device generating the probe, particularly if measurements have to be carried out in modern storage chips. The offsets in the electron probe due to the periodic current consumption of the IC present considerable problems in this arrangement. To reduce the resultant measurement errors, it is proposed to determine the offset in dependence on phase and to compensate for this offset with the correct phase during the measurement.