A method and the crucible for the solidification of the materials and use for the semiconductor crystal growth -.

摘要

The invention makes it possible, for the crystallogenesis of semi-finished - conductors in a crucible, the separation of the material, which has solidified against the wall of the crucible. / p & & p & the latter is of a roughness of an angle r to be sufficient to allow, by virtue of the angle of growth and the wetting angle t between the liquid material 16 and the wall 14 of the crucible, the production: / p & & p & (a) of a composite between the moistening liquid and the crucible, and / p & & p & (b) of a separation of the crucible during solidification, thus ensuring the separation is full, with respect to the wall 14 of the crucible of the solidified crystal 22 from the liquid 16. / p & & p & application to the crystal growth of the semi-finished - conductors.