Method for manufacturing a monolithic integrated circuit with at least one CMOS field effect transistor and a bipolar npn transistor.

摘要

P The invention relates to a method for manufacturing a monolithic integrated circuit, with at least one CMOS field effect transistor and one bipolar npn transistor, in which a thin oxide layer is covered with a protective polysilicon layer. both in the area of the bipolar transistor and in the area of the field effect transistor. /P