Amorphous semiconductor, amorphous semiconductor device using hydrogen radicals

摘要

Amorphous semiconductor thin film is exposed to an atmosphere of hydrogen radical during or after the formation of thin film, or is subject to light irradiation having a density of not less than 10 W/cm. sup.2 at a wavelength of 300 to 700 nm during the formation of the thin film. The obtained thin film has improved, i.e. small, photo deterioration. The semiconductor device using the above thin film is preferably applied to solar cells or thin film transistors.