首页>
外国专利>
Chromeless phase-shift mask and method for making
Chromeless phase-shift mask and method for making
展开▼
机译:无铬相移掩模及其制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method is provided for forming a right angle (30) on a chromeless phase-shift mask (31). A first phase-shift element (32) and a second phase-shift element (33) are positioned at a ninety degree angle, on the chromeless phase-shift mask (31), wherein there is a predetermined space (34) between the first and second phase-shift elements (32,33). The space between the phase-shift elements eliminates hot spot formation that causes unintentional exposure of the semiconductor substrate.
展开▼