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MISFET including GaAs substrate and a Group II-VI gate insulator
MISFET including GaAs substrate and a Group II-VI gate insulator
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机译:包括GaAs衬底和II-VI组栅极绝缘体的MISFET
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摘要
A MISFET includes a GaAs substrate, a gate insulating film of a II-VI group compound including Zn, Mg, S, and Se epitaxially grown on the GaAs substrate, and a gate electrode formed on the gate insulating film.
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