Self-Aligned GaAs MISFET's with a Low-Temperature-Grown GaAs Gate Insulator

摘要

GaAs MISFET's with a low-temperature-grown (LTG) GaAs gate insulator and ion-implanted self-aligned source and drain n+ regions are demonstrated. The resistivity and breakdown field of the LTG GaAs insulator were not changed appreciably by implantation and 800 deg C activation annealing. The gate leakage current remained very low, at a value of approximately 1 microA per micrometer squared of gate area at 3 V forward gate bias. Because of the reduced source and drain resistance, the drain saturation current and the transconductance of self-aligned MISFET's increased more than twofold after ion implantation.