Enhanced radiative zone-melting recrystallization method and apparatus

摘要

A method is provided for zone-melting-recrystallization (ZMR) to produce high quality substantially subboundary-free silicon-on- insulator (SOI) thin films by controlled radiant heating of the silicon film. Using this technique, a much wider experimental parameter range which improves the uniformity of the crystalline quality over the entire SOI film is possible.