A magneto-optical storage device having a configuration wherein a first AlN film, a Pt/co multi-layer film formed by alternately depositing Pt and Co, a second AlN film, and an Al reflective film are successively laminated on a substrate in this order. Assuming that respectively the thickness of the first AlN film is &dgr;AlN (1); that of the second AlN film is &dgr;AlN (2); that of the Pt single layer is &dgr; Pt; that of the Co single layer is &dgr;Co; and the total thickness of the Pt/Co multi-layer film is &dgr;Pt/Co, each thickness of those layers is set to range within: 50 nm ≦&dgr;AlN (1)≦200 nm; 120 nm. ltoreq. &dgr;AlN (2)≦140 nm; 0.6 nm≦&dgr;Pt≦1.0 nm; 0.3 nm≦&dgr;Co≦ 0.6 nm; and 15 nm≦&dgr;Pt/Co. ltoreq.20 nm. In accordance with the above arrangement, it is possible to greatly widen the tolerances of the film thicknesses of the first and second dielectric layers for obtaining a predetermined reflective index as well as a maximum Kerr rotation angle. Consequently, without strictly controlling the film thicknesses of the first and second AlN films, a magneto-optical storage device with stable performance suitable for practical use can be produced easily.
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