Selective and blanket chemical vapor deposition of Cu from (amp;bgr;- diketonate)Cu(L).sub.n by silica surface modification

摘要

In microelectronic manufacture, vertical interconnects in integrated circuits are made by the selective deposition of copper onto SiO.sub.2, which is controlled by reacting the SiO.sub.2 surface with chlorotrimethylsilane or dimethyldichlorosilane. These silanes interact with the surface hydroxyl groups to reduce the number of sites at which (hfac)Cu(VTMS) can adsorb and react, therefore providing selectivity.