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Method of forming double well substrate plate trench DRAM cell array
Method of forming double well substrate plate trench DRAM cell array
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机译:形成双阱衬底板沟槽dram单元阵列的方法
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摘要
A high density substrate plate DRAM cell memory device and process are described in which a buried well region is formed adjacent to deep trench capacitors such that the substrate region of DRAM transfer FETs can be electrically isolated from other FETs on a semiconductor substrate. The buried region is partially formed by ion implantation and diffusion to intersect the walls of the deep trenches.
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