首页> 外国专利> NARROW-BANDWIDTH HIGH-SENSITIVITY PHOTODETECTOR FOR REVERSE PHOTOELECTRON SPECTROSCOPY

NARROW-BANDWIDTH HIGH-SENSITIVITY PHOTODETECTOR FOR REVERSE PHOTOELECTRON SPECTROSCOPY

机译:反向光电子谱学的窄带高灵敏度光电检测器

摘要

PURPOSE: To enhance a resolution and sensitivity and also to improve the performance of the whole of equipment including an electron gun, by a method wherein a single-crystal CaF2 window having a KCL thin film evaporated is provided in front of a photomultiplier of a photodetector and the KCl thin film is evaporated on the surface of a first dynode of the photomultiplier. ;CONSTITUTION: An electron beam 2 emitted from an electron gun 1 hits on a sample 3, a light 4 emitted from the sample 3 hits on a converging mirror 5 and it is converged thereby and projected to a photodetector 6. The light entering the photodetector 6 passes through a single-crystal CaF2 window 8 covered with a KCL thin film 9. Combination of a first dynode 11 of a photomultiplier 7 whereon the KCI thin film 9 is evaporated with the KCL thin film 9 with which the single-crystal CaF2 window 8 is covered functions as a low-cut filter, while the part of the single-crystal window 8 functions as a high-cut filter. According to this constitution, the rise of sensitivity is made sharp, the emission efficiency of a photoelectron is improved and also the sensitivity is enhanced.;COPYRIGHT: (C)1995,JPO
机译:目的:通过提供一种蒸发了KCL薄膜的单晶CaF 2 窗口的方法,提高分辨率和灵敏度,并改善包括电子枪在内的整个设备的性能。在光电探测器的光电倍增管的前面,氯化钾薄膜在光电倍增管的第一倍增极的表面上蒸发。 ;组成:从电子枪1发射的电子束2撞击样品3,从样品3发射的光4撞击会聚镜5,然后会聚并投射到光电探测器6。进入光电探测器的光。图6中的光穿过覆盖有KCL薄膜9的单晶CaF 2 窗口8。光电倍增管7的第一倍增极11的组合,在其上KCI薄膜9与KCL薄膜9一起蒸发。覆盖单晶CaF 2 窗口8的部分用作低切滤波器,而单晶窗口8的一部分用作高切滤波器。根据该结构,使灵敏度的上升急剧,光电子的发射效率得到提高,并且灵敏度也得到提高。; COPYRIGHT:(C)1995,JPO

著录项

  • 公开/公告号JPH07260718A

    专利类型

  • 公开/公告日1995-10-13

    原文格式PDF

  • 申请/专利权人 HIROSHIMA UNIV;

    申请/专利号JP19940053822

  • 发明设计人 NAMATAME HIROBUMI;TANIGUCHI MASAKI;

    申请日1994-03-24

  • 分类号G01N23/227;G01J1/02;G01J1/04;G01N21/62;

  • 国家 JP

  • 入库时间 2022-08-22 04:29:50

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