首页> 外国专利> Single crystal method of manufacture of MTiOAsO4, single domain crystals and crystalline than to become composition MTiOAsO4 of MTiOAsO4

Single crystal method of manufacture of MTiOAsO4, single domain crystals and crystalline than to become composition MTiOAsO4 of MTiOAsO4

机译:MTiOAsO4的单晶制造方法,单畴晶体和晶体比成为MTiOAsO4的组成MTiOAsO4

摘要

Doped crystalline compositions (e.g., single domain crystals) of MTiOAsO4 (wherein M is K, Rb and/or Cs) are disclosed which contain at least about 10 ppm total of Fe, Sc and/or In dopant. Also disclosed is a flux process which is characterized by adding said dopant to a melt containing the components for forming MTiOAsO4, in an amount effective to provide a doped single domain crystal of MTiOAsO4 containing at least 10 ppm of said dopant.
机译:公开了MTiOAsO 4(其中M为K,Rb和/或Cs)的掺杂的晶体组合物(例如,单畴晶体),其总共包含至少约10ppm的Fe,Sc和/或In掺杂剂。还公开了一种助熔剂工艺,其特征在于将所述掺杂剂添加到含有用于形成MTMAAsO 4的组分的熔体中,其量足以提供含有至少10ppm的所述掺杂剂的MTMAAsO 4的掺杂单畴晶体。

著录项

  • 公开/公告号JPH07506079A

    专利类型

  • 公开/公告日1995-07-06

    原文格式PDF

  • 申请/专利权人

    申请/专利号JP19930516840

  • 发明设计人

    申请日1993-03-25

  • 分类号C30B29/22;C30B17/00;G02F1/35;

  • 国家 JP

  • 入库时间 2022-08-22 04:29:25

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