DEPOSITION OF ADHERENT TUNGSTEN SILICIDE FILM FROM DICHLOROSILANE AND TUNGSTEN HEXAFLUORIDE

摘要

PURPOSE: To form a WSi_x film having a low fluorine content and a good adhesiveness on a semiconductor substrate by operating in the absence of nitrogen at a surface of substrate and in a chamber in deposition of a WSi_x film on the surface of the semiconductor substrate in a low pressure chemical vapor growth. ;CONSTITUTION: WSi_x is deposited on the surface of the semiconductor substrate in the low pressure chemical vapor growth chamber by the following steps (a) and (b): (a) all of nitrogen is removed from the surface of the substrate (purging with argon is preferable), and (b) a mixture of an inert gas (argon is suitable), dichlorosilane and WF₆ is passed through the reaction chamber having 0.5-10 Torr and about 500-575°C to form the adherent WSi_x film on the substrate.;COPYRIGHT: (C)1995,JPO