ACCELERATED LIFE TESTING METHOD FOR SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

PURPOSE: To provide an accelerated life testing method of a semiconductor integrated circuit wherein the method can surely prevent thermal destruction of a circuit element attributed to a latch-up phenomenon and set the heating temperature and the applied voltage to be sufficiently high. ;CONSTITUTION: At the time of a dynamic burn-in screening carried out while bias being applied to an electric power source voltage E and a signal voltage S at temperature as high as 125°C, resetting to set the electric power source voltage E and the signal voltage S at low level periodically in a cycle is repeated wherein the cycle is regulated by the electrification time T within which element destruction does not occur even if a latch-up phenomenon happens and a reset time (t) in which the latch-up current is surely shut off.;COPYRIGHT: (C)1995,JPO