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Radiation thermometer and wafer thermometry manner null for wafer thermometry

机译:辐射温度计和晶片测温方式对晶片测温无效

摘要

PURPOSE:To measure the temperature on the surface with high accuracy by a method wherein the influence of a plasma is reduced to a minimum by using an optical filter which passes only infrared rays at a wavelength which is not transmitted through the wafer. CONSTITUTION:Infrared rays which have been radiated form a measuring face 8 are incident on the inside of a quartz round rod 2 from a photodetection face 2a and are propagated up to the other end 2c while they are being reflected totally on a side-wall 2b. A sheath tube 5 functions to shut off the infrared rays which are incident from the side face of the quartz round rod 2 and to eliminate their influence. The transmitted infrared rays at a wavelength which is not passed through a wafer are passed through an interference filter 3; after that, they are incident on an infrared detector 4. An electric current which is proportional to their intensity is generated; and is amplified by an amplifier 6 and converted into a temperature value by using an operation device 7.
机译:目的:通过一种方法来高精度测量表面温度,该方法是通过使用仅使不透射通过晶片的波长的红外线通过的光学滤光片,将等离子体的影响减小到最小。组成:从测量面8发出的红外线从光电检测面2a入射到石英圆棒2的内部,并传播到另一端2c,同时它们在侧壁2b上被完全反射。 。护套管5起到阻断从石英圆棒2的侧面入射的红外线并消除其影响的作用。透射的,未通过晶片的波长的红外线通过干涉滤光片3。之后,它们入射到红外检测器4上。产生与其强度成比例的电流。并由放大器6放大,并通过操作装置7将其转换为温度值。

著录项

  • 公开/公告号JPH0691144B2

    专利类型

  • 公开/公告日1994-11-14

    原文格式PDF

  • 申请/专利权人 株式会社日立製作所;

    申请/专利号JP19900252419

  • 发明设计人 平沢 茂樹;渡辺 智司;

    申请日1990-09-21

  • 分类号H01L21/66;G01R31/26;

  • 国家 JP

  • 入库时间 2022-08-22 04:26:54

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