PURPOSE:To avoid discontinuity between cell plate electrodes and give a common potential to those electrodes even if dimensions of capacitor parts are reduced compared to the dimensions of contact holes by arranging memory cells so as to be shifted by 1/2n (wherein (n) is a positive integer not less than 2) pitch. CONSTITUTION:Field oxide films 12 are selectively formed on a substrate 11 surface and island regions 13 composing two memory cells separated by the field oxide film 12 are also formed on the substrate 11 surface. The island regions 13 are so arranged as to be shifted by 1/4 pitch. Buried type capacitors 14 are provided near the both ends of the island regions 13. If the memory cells are so arranged as to be shifted by 1/4 pitch like this, as the minimum width of the cell plate electrode 17 corresponds to the length of the buried type capacitor 14, as long as the electrodes 17 are provided above the capacitors 14, the electrodes 17 are connected together diagonally and individual electrodes are not isolated however finely the memory cells are formed.
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