METHOD FOR GROWING MULTIELEMENT SEMICONDUCTOR CRYSTAL, PSEUDO PIPE CLOSING METHOD OF BLANK MOLECULE AND GROWTH DEVICE FOR MULTIELEMENT SEMICONDUCTOR CRYSTAL

摘要

PURPOSE: To obtain a homogeneous multielement semiconductor crystal at a low cost by immersing a prescribed substrate into a crystal blank melt and growing the crystal while pulling up the substrate at a speed adaptive to the precipitation speed of this multielement semiconductor crystal. ;CONSTITUTION: The blank melt 2 in which the blank exists in the form of HgTe and CdTe is packed into a quartz vessel 1a. Next, the CdTe substrate 5 is mounted at a substrate holder 6 and a shaft 4 is lowered to immerse the substrate 5 into the melt 2. The multielement semiconductor crystal is then grown on the substrate 5 while the shaft 4 is pulled up at the speed adaptive to the precipitation speed of the multielement semiconductor crystal. On the other hand, the blank melt of the multielement semiconductor is housed into a heat resistant vessel and thereafter, a sealing jig consisting of a heat resistant material to narrow the spacing between the shaft and the heat resistant vessel is installed in this vessel. The temp. of the space between this sealing jig and the heat resistant vessel is then set higher than the temp. of the space near the blank melt and the liquid surface of the blank melt, by which the vessel is pseudo-closed and the part above the liquid surface is maintained in a good atmosphere.;COPYRIGHT: (C)1995,JPO