首页> 外国专利> ARTIFICIAL LATTICE FILM AND MAGNETORESISTIVE EFFECT ELEMENT USING ARTIFICIAL LATTICE FILM

ARTIFICIAL LATTICE FILM AND MAGNETORESISTIVE EFFECT ELEMENT USING ARTIFICIAL LATTICE FILM

机译:人工晶格膜和使用人工晶格膜的磁致电阻效应元件

摘要

PURPOSE: To provide an artificial lattice film, in which a high MR ratio is displayed and coercive force is inhibited, and a magnetoresistive effect element using the artificial lattice film. ;CONSTITUTION: Magnetic layers 2 containing 1-50 atomic % Cu and comprising at least one kind selected from Fe, Ni and Co and conductor layers 3 are Iaminated alternately, thus manufacturing an artificial lattice film. The artificial lattice film is formed onto a non-magnetic substrate 1, thus constituting a magnetoresistive effect element. Accordingly, the magnetoresistive effect element having excellent characteristics for a magnetic head and a magnetic sensor is obtained.;COPYRIGHT: (C)1995,JPO
机译:用途:提供一种显示出高MR比且抑制矫顽力的人造晶格膜,以及使用该人造晶格膜的磁阻效应元件。 ;组成:交替地胺化包含1-50原子%的Cu并包括选自Fe,Ni和Co中的至少一种的磁性层2和导体层3,从而制造人造晶格膜。人造晶格膜形成在非磁性基板1上,从而构成磁阻效应元件。因此,获得了对磁头和磁传感器具有优异特性的磁阻效应元件。;版权所有:(C)1995,JPO

著录项

  • 公开/公告号JPH07192919A

    专利类型

  • 公开/公告日1995-07-28

    原文格式PDF

  • 申请/专利权人 SONY CORP;

    申请/专利号JP19930329317

  • 申请日1993-12-27

  • 分类号H01F10/14;G11B5/39;H01L43/08;

  • 国家 JP

  • 入库时间 2022-08-22 04:24:36

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