首页> 外国专利> FORMING METHOD OF NANO SIZE DOT PATTERN BY ELECTRON BEAM HOLOGRAPHY AND LITHOGRAPHY EQUIPMENT

FORMING METHOD OF NANO SIZE DOT PATTERN BY ELECTRON BEAM HOLOGRAPHY AND LITHOGRAPHY EQUIPMENT

机译:电子束全息照相术和光刻设备形成纳米点阵图形的方法

摘要

PURPOSE:To improve position precision and simplify a process, by forming a dot pattern by using a one-body type biprism wherein two biprisms which are perpendicularly intersect each other are formed in an unified body or a multibiprism which is formed similarly by using two sets of a plurality of biprisms. CONSTITUTION:Electron beam biprisms 103 formed in an unified body are arranged. On a resist coated substrate 105 arranged just under the biprisms, electron beam interference patterns are made to interfere with each other by the respective biprisms, and an interference pattern of dots is formed. This pattern is recorded on resist 104 as the photosensitive material on the substrate 105.
机译:用途:为提高定位精度并简化工艺,通过使用一体式双棱镜形成点图案的一体式双棱镜在同一主体中形成两个相互垂直的双棱镜,或者通过使用两组类似地形成的多棱镜多个双棱镜。组成:排列成一体的电子束双棱镜103。在正好位于双棱镜下方的涂覆有抗蚀剂的基板105上,通过各个双棱镜使电子束干涉图案彼此干涉,并且形成点的干涉图案。该图案被记录在抗蚀剂104上作为基板105上的光敏材料。

著录项

  • 公开/公告号JPH0745511A

    专利类型

  • 公开/公告日1995-02-14

    原文格式PDF

  • 申请/专利权人 NEC CORP;

    申请/专利号JP19930205570

  • 发明设计人 MATSUI SHINJI;

    申请日1993-07-29

  • 分类号H01L21/027;G03H5/00;

  • 国家 JP

  • 入库时间 2022-08-22 04:24:33

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号