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MULTIPLE QUANTUM WELL SEMICONDUCTOR LASER AND OPTICAL COMMUNICATION SYSTEM USING THE SAME
MULTIPLE QUANTUM WELL SEMICONDUCTOR LASER AND OPTICAL COMMUNICATION SYSTEM USING THE SAME
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机译:多量子阱半导体激光器和使用该激光器的光通信系统
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摘要
PURPOSE: To reduce chirping by using InGaAsP having a specific composition wavelength as materials of an optical wavelength layer and a barrier layer, and thereby eliminating an overflow of electrons implanted in a well layer to the barrier layer. ;CONSTITUTION: A multiple quantum well semiconductor laser comprises an InP substrate 1, a multilayer structure formed on the substrate 1 to emit a laser light having a wavelength of 1.29 to 1.33μm. This structure has at least a multiple quantum well active layer 4, which contains InGaAsP well layers 10 and InGaAs barrier layers 11 alternately laminated. The layer 11 is lattice- matched to the substrate 1, and a composition wavelength of the layer 11 is substantially equal to 1.05μm. Thus, the laser which has wide band low distortion characteristics and no transmission deterioration can be obtained with high yield.;COPYRIGHT: (C)1994,JPO
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