Multi quantum well - the semiconductor laser and an optical communications system with such a laser

摘要

PURPOSE: To reduce chirping by using InGaAsP having a specific composition wavelength as materials of an optical wavelength layer and a barrier layer, and thereby eliminating an overflow of electrons implanted in a well layer to the barrier layer. ;CONSTITUTION: A multiple quantum well semiconductor laser comprises an InP substrate 1, a multilayer structure formed on the substrate 1 to emit a laser light having a wavelength of 1.29 to 1.33μm. This structure has at least a multiple quantum well active layer 4, which contains InGaAsP well layers 10 and InGaAs barrier layers 11 alternately laminated. The layer 11 is lattice- matched to the substrate 1, and a composition wavelength of the layer 11 is substantially equal to 1.05μm. Thus, the laser which has wide band low distortion characteristics and no transmission deterioration can be obtained with high yield.;COPYRIGHT: (C)1994,JPO