首页> 外国专利> METHOD FOR PERFORMING INITIALIZATION AND REPROGRAMMING OF CONTROL-OPERATION FUNCTION OF MEMORY DEVICE, AND MEMORY DEVICE WITH CIRCUIT FOR EXECUTING INTIALIZATION AND REPROGRAMMING THEREFOR

METHOD FOR PERFORMING INITIALIZATION AND REPROGRAMMING OF CONTROL-OPERATION FUNCTION OF MEMORY DEVICE, AND MEMORY DEVICE WITH CIRCUIT FOR EXECUTING INTIALIZATION AND REPROGRAMMING THEREFOR

机译:用于执行对存储器的控制操作功能的初始化和重新编程的方法,以及具有用于执行初始化和对其进行重新编程的电路的存储器

摘要

PURPOSE: To contract the reprogramming time of the mode register of a memory device and improve its processing speed, by using a master control circuit and an initialization-reprogramming circuit. ;CONSTITUTION: First, responding to a first command, a first control-operation option is programmed into an SDRAM(synchronous dynamic random memory) device 30. and responding to a second command, a second control-operation option is reprogrammed into the SDRAM device 30. A master control circuit 37 for receiving the first and second commands therein and an initialization-reprogramming circuit 35 are integrated into the SDRAM device 30. The master control circuit 37 responds to the first command to generate signals and perform initializations, and responds to the second command to generate a reprogramming signal. The initialization- reprogramming circuit 35 responds to the intialization signal fed from the circuit 37 to control the initial programming of the control-operation function of the SDRAM device 30, and resonds to the reprogramming signal fed from the circuit 37 to control the reprogramming of the control-operation function of the SDRAM device 30.;COPYRIGHT: (C)1995,JPO
机译:目的:通过使用主控制电路和初始化重新编程电路来缩短存储设备模式寄存器的重新编程时间并提高其处理速度。构成:首先,响应于第一命令,将第一控制操作选项编程到SDRAM(同步动态随机存储器)设备30中,并且响应于第二命令,将第二控制操作选项重新编程到SDRAM设备中30.用于在其中接收第一和第二命令的主控制电路37和初始化重新编程电路35被集成到SDRAM设备30中。主控制电路37响应于第一命令以产生信号并执行初始化,并且响应于第二条命令产生一个重新编程信号。初始化重编程电路35响应于从电路37馈送的初始化信号,以控制SDRAM设备30的控制操作功能的初始编程,并且响应于从电路37馈送的重新编程信号,以控制SDRAM设备30的重编程。 SDRAM设备30的控制操作功能。版权所有:(C)1995,日本特许厅

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