首页> 外国专利> OPTICAL FILM AND ITS FORMATION, ANTIREFLECTION FILM AND ITS FORMATION, REFLECTION FILM AND ITS FORMATION AND OPTICAL ELEMENT HAVING OPTICAL FILM

OPTICAL FILM AND ITS FORMATION, ANTIREFLECTION FILM AND ITS FORMATION, REFLECTION FILM AND ITS FORMATION AND OPTICAL ELEMENT HAVING OPTICAL FILM

机译:光学膜及其形成,抗反射膜及其形成,反射膜及其形成和具有光学膜的光学元件

摘要

PURPOSE:To widely change refractive indices by growth conditions by providing multilayered structures of low-refractive index layers and high-refractive index layers consisting of titanium oxynitride. CONSTITUTION:A semiconductor layer 21 has a structure obtd. by holding an active layer 23 with two clad layer 22, 24. The antireflection films 25 consisting of a high- refractive index optical film 26 and a low-refractive index optical film 27 are formed at its one end and the reflection films 28 consisting of a high-refractive index optical film 29 and a low-refractive index optical film 30 are formed at the other end. The titanium oxynitride(TiON) which is a dielectric substance and other oxynitride compds. are used without using ZnS, etc., as the optical film materials of the high refractive index constituting the reflection films 28 having the multilayered structure and the antireflection films 25 having the multilayered structure. An ion assist vapor deposition method which is low in a heating temp. of a substrate to be stuck with the TiON, is good in the adhesion property of the TiON to the substrate and is capable of operating the refractive index of the TiON is used as the method for forming the oxynitride.
机译:目的:通过提供由氧氮化钛组成的低折射率层和高折射率层的多层结构,通过生长条件来广泛改变折射率。构成:半导体层21具有obdd结构。通过将活性层23和两个包层22、24保持在一起,在其一端形成由高折射率光学膜26和低折射率光学膜27构成的防反射膜25,并且由反射膜28构成。在另一端形成高折射率光学膜29和低折射率光学膜30。作为电介质的氧氮化钛(TiON)与其他氧氮化物组成。作为构成具有多层结构的反射膜28和具有多层结构的防反射膜25的高折射率的光学膜材料,不使用ZnS等而使用。加热温度低的离子辅助气相沉积法。将要被TiON粘附的基板的厚度为200nm时,作为形成氧氮化物的方法,使用了良好的TiON对基板的粘附性并且能够使TiON的折射率工作。

著录项

  • 公开/公告号JPH07113901A

    专利类型

  • 公开/公告日1995-05-02

    原文格式PDF

  • 申请/专利权人 FUJITSU LTD;

    申请/专利号JP19930320458

  • 发明设计人 OSAKA SHIGEO;MIURA SHUICHI;OKADA NOBUMASA;

    申请日1993-12-20

  • 分类号G02B1/11;C23C14/06;C23C14/48;

  • 国家 JP

  • 入库时间 2022-08-22 04:22:29

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