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REDUCED PRESSURE CVD VAPOR GROWTH DEVICE

机译:减压CVD气相生长装置

摘要

PURPOSE: To equalize the temperature in a boat arrangement part even if a wall deposition is produced during the film forming step by a method wherein an exhaust port and an aperture are provided in the same region of the boat arrangement part either upward or downward part for mounting the wafers to be treated. ;CONSTITUTION: A quartz boat 15 wherein wafers 17 to be treated are contained downward in a constant direction at a specific interval is arranged in an inner tube 12. Besides, a nozzle 16 is arranged along the boat 15 while a jetting port feeding a reaction gas is provided on the surface of the nozzle 16. Furthermore, an inner aperture part 19 for exhausting the reaction gas used for the film forming step is provided on the apex of the inner tube 12. On the other hand, an outer tube 11 is mounted on a flange 11a through the intermediary of a packing rubber while an exhaust port 13 is provided on the apex of the tube 11 to be connected to a vacuum exhaust mechanism outside a furnace. Accordingly, a wall deposition even if produced can be restricted to a region where neither its position, nor its size disturb the evenness of the temperature of the boat arrangement part.;COPYRIGHT: (C)1995,JPO
机译:目的:即使在成膜步骤中通过以下方法产生壁沉积,也要使舟状部件中的温度均匀,在该方法中,在舟状部件的同一区域内向上或向下设置排气口和孔安装要处理的晶片。 ;组成:石英舟皿15,其中要处理的晶片17以一定的间隔沿恒定方向向下放置在内管12中。此外,沿着舟皿15布置有喷嘴16,同时供给反应的喷射口在喷嘴16的表面上设置有气体。此外,在内管12的顶点上设置有用于排出成膜工序中使用的反应气体的内孔部19。通过在填充橡胶的中间安装在凸缘11a上,同时在管11的顶点上设置有排气口13,以与炉外的真空排气机构连接。因此,即使产生壁沉积物,也可以限制在既不影响其位置也不影响船形部件温度均匀性的区域。版权所有:(C)1995,JPO

著录项

  • 公开/公告号JPH0737812A

    专利类型

  • 公开/公告日1995-02-07

    原文格式PDF

  • 申请/专利权人 TOSHIBA CORP;

    申请/专利号JP19930199272

  • 发明设计人 MATSUSHITA YOSHIAKI;NUMANO MASAKUNI;

    申请日1993-07-16

  • 分类号H01L21/205;

  • 国家 JP

  • 入库时间 2022-08-22 04:21:27

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