首页> 外文OA文献 >Correction to “Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices”

【2h】

Correction to “Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices”

机译：对低压化学气相沉积的单层石墨烯的部分压力辅助生长的校正：对高性能石墨烯FET器件的影响“

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Indu Sharma; Girija Shankar Papanai; Sharon Jyotika Paul; Bipin Kumar Gupta;
展开▼
作者单位

展开▼
年度 2020
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Correction to “Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices” [J] . Indu Sharma, Girija Shankar Papanai, Sharon Jyotika Paul, ACS Omega . 2020,第40期

机译：对低压化学气相沉积的单层石墨烯的部分压力辅助生长的校正：对高性能石墨烯FET器件的影响“
2. Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices [J] . Indu Sharma, Girija Shankar Papanai, Sharon Jyotika Paul, ACS Omega . 2020,第35期

机译：通过低压化学气相沉积种植单层石墨烯的部分压力辅助生长：对高性能石墨烯FET器件的影响
3. Tribological Performance of Steel With Multi-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition [J] . Singh Sudesh, Chen Xinchun, Zhang Chenhui, Journal of Tribology . 2020,第12期

机译：用低压化学气相沉积多层石墨烯的钢铁摩擦学性能
4. Controllable Synthesis of Single-Crystal Monolayer Graphene on Copper Foils by Low-Pressure Chemical Vapor Deposition [C] . Lei Guo, Xuekang Chen, Lanxi Wang, The 14th Annual conference of the Chinese Society of Micro-Nano technology; The 3rd International conference of the Chinese Society of Micro-Nano technology; The 6th International workshop on innovation and commercialization of Micro amp; Nanotechnology . 2012

机译：低压化学气相沉积法在铜箔上可控合成单晶单层石墨烯
5. Studies in graphene growth and processing using atmospheric pressure chemical vapor deposition. [D] . Merrell, Andrew Nephi. 2016

机译：使用大气压化学气相沉积进行石墨烯生长和加工的研究。
6. Correction to Partial Pressure Assisted Growth of Single-LayerGraphene Grown by Low-Pressure Chemical Vapor Deposition: Implicationsfor High-Performance Graphene FET Devices [O] . Indu Sharma, *, Girija Shankar Papanai, 2020

机译：校正单层部分压力辅助生长由低压化学气相沉积种植的石墨烯：含义用于高性能石墨烯FET器件
7. Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices [O] . -1

机译：通过低压化学气相沉积种植单层石墨烯的部分压力辅助生长：对高性能石墨烯FET器件的影响
8. Extraordinary magnetoresistance in shunted chemical vapor deposition grown graphene devices [R] . Friedman, A. L., Robinson, J. T., Perkins, F. K., 2011

机译：在分流化学气相沉积生长的石墨烯器件中的非凡磁阻

Correction to “Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices”

著录项

引文网络

相似文献

相关主题

期刊订阅