首页> 外国专利> MANUFACTURE OF ACCELEROMETER BY SILICON TECHNIQUE ON INSULATOR, AND ACCELEROMETER OBTAINED THEREBY

MANUFACTURE OF ACCELEROMETER BY SILICON TECHNIQUE ON INSULATOR, AND ACCELEROMETER OBTAINED THEREBY

机译:在绝缘子上用硅技术制造加速度计,并由此获得了加速度计

摘要

PURPOSE: To manufacture a compact accelerometer of a high density, having a sensing shaft in parallel with and/or vertical to the base, at a low cost, by using an on-insulator silicon technique also related to a surface fine treatment. ;CONSTITUTION: A N single-crystal silicon surface layer 32 is formed on a silicon base 8 through a silicon dioxide layer (insulating layer) by the on-insulator silicon technique. Then, the single-crystal silicon layer is epitaxially grown on a flexible beam 6 to increase the thickness of the vibration mass body 2. Then, the silicon surface layer 32 and the insulating layer 28 are etched to the base 8 to form the vibration mass body 2 as a movable member, the flexible beam 6, and the tooth electrodes 12, 15 and the movable comb-type elements 14, 16, 17 as the measuring means. Then the insulating layer 28 is partially removed to made the movable members 2, 6 free, and the movable members 2, 6 and the base 8 are connected with each other on the remained area.;COPYRIGHT: (C)1995,JPO
机译:目的:通过使用还涉及表面精细处理的绝缘体上硅技术,以低成本制造高密度紧凑型加速度计,使其传感轴与基座平行和/或垂直于基座。组成:N单晶硅表面层32通过绝缘体上硅技术通过二氧化硅层(绝缘层)形成在硅基底8上。然后,在柔性梁6上外延生长单晶硅层,以增加振动块体2的厚度。然后,将硅表面层32和绝缘层28蚀刻至基底8以形成振动块。主体2作为可动件,挠性梁6,齿电极12、15和可动梳型元件14、16、17作为测量装置。然后部分地除去绝缘层28以使可移动部件2、6自由,并且可移动部件2、6和基座8在剩余区域上彼此连接。;版权:(C)1995,JPO

著录项

  • 公开/公告号JPH0798327A

    专利类型

  • 公开/公告日1995-04-11

    原文格式PDF

  • 申请/专利权人 COMMISS ENERG ATOM;

    申请/专利号JP19930337915

  • 发明设计人 BERUNAARU DEIN;MARII TEREIZU DEIREI;

    申请日1993-12-28

  • 分类号G01P15/12;H01L21/306;H01L29/84;

  • 国家 JP

  • 入库时间 2022-08-22 04:21:00

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