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Out-of-plane Characterization of Silicon-on-insulator Multiuser MEMS Processes-based Tri-axis Accelerometer

机译:绝缘体上硅多用户MEMS工艺的三轴加速度计的平面外表征

摘要

In this paper, we discuss the analysis of out-of-plane characterization of a capacitive tri-axis accelerometer fabricated using SOI MUMPS (Silicon-on Insulator Multi user MEMS Processes) process flow and the results are compared with simulated results. The device is designed with wide operational 3 dB bandwidth suitable for measuring vibrations in industrial applications. The wide operating range is obtained by optimizing serpentine flexures at the four corners of the proof mass. The accelerometer structure was simulated using COMSOL Multiphysics and the displacement sensitivity was observed as 1.2978 nm/g along z-axis. The simulated resonant frequency of the device was found to be 13 kHz along z axis. The dynamic characterization of the fabricated tri-axis accelerometer produces the out-of-plane vibration mode frequency as 13 kHz which is same as the simulated result obtained in z-axis.
机译:在本文中,我们讨论了使用SOI MUMPS(硅绝缘子多用户MEMS工艺)工艺流程制造的电容式三轴加速度计的平面外特性分析,并将结果与​​仿真结果进行了比较。该设备设计具有3 dB的宽工作带宽,适用于测量工业应用中的振动。通过优化检测质量的四个角处的蛇形弯曲可获得较宽的工作范围。使用COMSOL Multiphysics模拟了加速度计的结构,沿z轴的位移灵敏度为1.2978 nm / g。发现该器件的模拟谐振频率沿z轴为13 kHz。所制造的三轴加速度计的动态特性产生的平面外振动模式频率为13 kHz,与在z轴上获得的模拟结果相同。

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