GROWTH METHOD OF GAAS/ALGAAS THIN FILM

摘要

PURPOSE: To improve the flatness of a growth interface, by heating a GaAs substrate in the manner in which the lower limit value of the temperature of a GaAs substrate to be heated is selected to be a high value, when the Al mixed crystal ratio of an Al_xGa_1-xAs thin film is selected to be a large value. ;CONSTITUTION: The inside of a growth vessel 1 is kept in the state of ultra-high vacuum by vacuum pump sucking from an aperture 1a formed on a peripheral wall part, in the state that a valve 6 is opened. A substrate heater 7 is installed on a substrate holder 2, and heats a GaAs substrate S. When the Al mixed crystal ratio of an Al_xGa_1-xAs layer is selected to be a large value, the lower limit value of the temperature of the GaAs substrate S is selected to be a high value, and the GaAs substrate S is heated. By setting the growth condition in the above manner, excellent flatness can be obtained.;COPYRIGHT: (C)1995,JPO