首页> 外国专利> REDUCTION OR ELIMINATION OF FLIM DEFECTS DUE TO HYDROGEN EVOLUTION DURING CATHODIC ELECTRODEPOSITION.

REDUCTION OR ELIMINATION OF FLIM DEFECTS DUE TO HYDROGEN EVOLUTION DURING CATHODIC ELECTRODEPOSITION.

机译:减少或消除阴极电沉积过程中因氢逸出引起的薄膜缺陷。

摘要

THIS INVENTION IS DIRECTED TO A METHOD FOR ELIMINATING OR REDUCING PINHOLE DEFECTS IN CATAPHORETICALLY DEPOSITED FILMS WITHOUT INTERFERING WITH THE ELECTROLYSIS OF WATER NEEDED FOR ELECTRODEPOSITION. THE METHOD COMPRISES DECREASING THE EVOLUTION OF HYDROGEN GAS AT THE CATHODE BY ADDING, TO THE ELECTRODEPOSITABLE COMPOSITONS, A COMPOUND WHICH IS REDUCED BY THE HYDROGEN PRODUCED AT THE HYDROGEN PRODUCED AT THE CATHODE DURING THE ELECTRODEPOSITION. THE HYDROGEN REACTS WITH THIS NON-GASEOUS COMPOUND RATHER THAN BECOMING HYDROGEN GAS AND FORMING BUBBLES WHICH LEAD TO PINHOLE DEFECTS.
机译:本发明涉及一种用于消除或减少阳离子沉积薄膜中的销钉缺陷的方法,该方法不干扰电解所需的水的电解。该方法包括通过将在电化学沉积过程中在阴极上产生的氢气中所产生的氢气所减少的化合物添加到可电沉积的化合物中来减少阴极处的氢气的逸出。氢气与这种非气态化合物的反应比变成氢气和形成气泡的气泡更容易导致针刺缺陷。

著录项

  • 公开/公告号MY106521A

    专利类型

  • 公开/公告日1995-06-30

    原文格式PDF

  • 申请/专利权人

    申请/专利号MYPI 91001459

  • 发明设计人 WINKLE MARK ROBERT;

    申请日1991-08-13

  • 分类号C25D13/10;

  • 国家 MY

  • 入库时间 2022-08-22 04:18:12

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号